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Publications 2010, Prof. Hans Hofsäss

 

Modeling the diode characteristics of boron nitride/silicon carbide heterojunctions

M. Brötzmann, H.-G. Gehrke, U. Vetter, and H. Hofsäss, Appl. Phys. Lett. 97 (2010) 103505

 

A new all-digital time differential g-g angular correlation spectrometer

M. Nagl, U. Vetter, M. Uhmacher, H. Hofsäss, Rev. Sci. Instr. 81(2010) 073501

 

Bimodal range distributions of low-energy carbon ions in tetrahedral amorphous carbon

P. Neumaier, A. Bergmaier, W. Eckstein, R. Fischer,  H. Hofsäss, H. U. Jäger, H. Kröger, C. Ronning and G. Dollinger, Europhys. Lett. 90 (2010) 46002

 

Nanoscale metal-silicide films prepared by surfactant sputtering and analyzed by RBS

K. Zhang, H. Hofsäss, and H. Zutz , Nucl. Instr. Meth. B 268 (2010) 1967

 

Perturbed angular correlation studies of the MAX phases Ti2AlN and Cr2GeC using ion implanted 111In as probe nuclei

D. Jürgens, M. Uhrmacher, H. Hofsäss, Jose Mestnik-Filho, M. Barsoum, Nucl. Instr. Meth. B 268 (2010) 2185

 

Self-Aligned Nanostructures Created by Swift Heavy Ion Irradiation

H. G. Gehrke, A. K. Nix, J. Krauser, C. Trautmann, A. Weidinger and H. Hofsäss, J. Appl. Phys. 107 (2010) 094305



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