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Publications 2010, Prof. Hans Hofsäss


Modeling the diode characteristics of boron nitride/silicon carbide heterojunctions

M. Brötzmann, H.-G. Gehrke, U. Vetter, and H. Hofsäss, Appl. Phys. Lett. 97 (2010) 103505


A new all-digital time differential g-g angular correlation spectrometer

M. Nagl, U. Vetter, M. Uhmacher, H. Hofsäss, Rev. Sci. Instr. 81(2010) 073501


Bimodal range distributions of low-energy carbon ions in tetrahedral amorphous carbon

P. Neumaier, A. Bergmaier, W. Eckstein, R. Fischer,  H. Hofsäss, H. U. Jäger, H. Kröger, C. Ronning and G. Dollinger, Europhys. Lett. 90 (2010) 46002


Nanoscale metal-silicide films prepared by surfactant sputtering and analyzed by RBS

K. Zhang, H. Hofsäss, and H. Zutz , Nucl. Instr. Meth. B 268 (2010) 1967


Perturbed angular correlation studies of the MAX phases Ti2AlN and Cr2GeC using ion implanted 111In as probe nuclei

D. Jürgens, M. Uhrmacher, H. Hofsäss, Jose Mestnik-Filho, M. Barsoum, Nucl. Instr. Meth. B 268 (2010) 2185


Self-Aligned Nanostructures Created by Swift Heavy Ion Irradiation

H. G. Gehrke, A. K. Nix, J. Krauser, C. Trautmann, A. Weidinger and H. Hofsäss, J. Appl. Phys. 107 (2010) 094305

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