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Publications until 1999, Prof. Hans Hofsäss

  1. Herstellungsverfahren für eine mikromechanische Vorrichtung
    H. Hofsäss, J. Boneberg, P. Leiderer
    Deutsches Patent Nr. 197 52 202.5-09 vom 25.11.1997
  2.  Synthesis and Properties of Cubic Boron Nitride Thin Films
    H. Feldermann, M. Sebastian, R. Merk, M. Restle, C. Ronning and H. Hofsäss, in Hard Coatings Based on Borides, Carbides &Nitrides, A. Kumar, Y.Chung, R.W.J. Chia (eds.), (TMS Minerals Metals and Materials Society, Warrendale, 1998), p.143
  3. Electronic Properties of Undoped and Doped Tetrahedral Amorphous Carbon
    H. Hofsäss, in Proceedings of First Specialist Meeting on Amorphous Carbon (SMAC 97), eds. S.R.P. Silva, J. Robertson, W.I. Milne, G.A.J. Amaratunga (World Scientific,
    Singapore, 1998) p. 296
  4. Cylindrical Spike Model for the Formation of Diamondlike Thin Films by Ion Deposition
    H. Hofsäss, C. Ronning, M. Sebastian and H. Feldermann, Appl. Phys. A 66 (1998) 153-182
  5. Ion Beam Deposition and Doping of Diamondlike Materials
    H. Hofsäss and C. Ronning, in: "Proc. 2nd Int. Conf. on Beam Processing of Advanced Ma­terias"l, eds. J. Singh, S. M. Copley, J. Mazumder, (ASM Int., Materials Park, 1996) p. 29-56
  6. Mass Separated Ion Beam Deposition: a Unique Technique to Grow DLC, c-BN and CN Films
    C. Ronning and H. Hofsäss, in Diamond Materials IV, Proc. 4th Int. Symposium, eds. K.V. Ravi, J.P. Dismukes, (The Electrochemical Society, Pennington, 1995) 359-364
  7.  Elastic Properties of Hard c-BN Films by Surface Brillouin Scattering
    M.H. Manghnani, X. Zhang, S. Tkachev, P. Zinin, H. Feldermann, C. Ronning, H. Hofsäss, A.G. Every, in Nondestructive Characterization of Materials IX, R.E. Geern, Jr. (ed.), AIP Conf. Proc. 497 (1999) 315
  8. Electrically Conducting Ion Tracks in Diamond-like Carbon Films for Field Emission
    M. Waiblinger, Ch. Sommerhalter, B. Pietzak, J. Krauser, B. Mertesacker, M. Ch. Lux-Steiner, S. Klaumünzer, A. Weidinger, C. Ronning, H. Hofsäss, Appl.
    Phys. A. 69 (1999) 239
  9. Room Temperature Growth of Cubic Boron Nitride
    H. Feldermann, R. Merk, H. Hofsäss, C. Ronning and T. Zheleva, Appl. Phys. Lett. 74 (1999) 1552
  10. Modelling of the Ion Beam Deposition Process of Covalently Bonded Diamondlike Materials
    H.C. Hofsäss, M. Sebastian, R. Merk, C. Ronning and H. Feldermann, Mat. Res. Soc. Symp. Proc. Vol. 498 (1998) 129
  11. Carbon nitride deposited using energetic species: A review on XPS studies
    C. Ronning, H. Feldermann, R. Merk, H. Hofsäss, P. Reinke and J.-U. Thiele, Phys.
    Rev. B58 (1998) 2207-2215
  12. Carbon Transport in Si (001) and Nucleation of Diamond-like Carbon Layers During Mass Selected Ion Beam Deposition
    S. Christiansen, M. Albrecht, H.P. Strunk, H. Hofsäss, C. Ronning and E. Recknagel,
    Diam. Relat. Mater 7 (1998) 15
  13. Thresholds for the Phase Formation of Cubic Boron Nitride Thin Films
    H. Hofsäss, H. Feldermann, M. Sebastian and C. Ronning, Phys. Rev. B 55 (1997) 13230
  14. Quantitative Analysis of Chemically-Enhanced Sputtering During Ion Beam Deposition of Carbon Nitride Thin Films
    H. Hofsäss, C. Ronning, H. Feldermann, M. Sebastian,
    Mat. Res. Soc.
    Symp. Proc. 438 (1997) 575-580
  15. Thin Film Growth of Group III Nitrides by Mass Separated Ion Beam Deposition
    C. Ronning, E. Dreher, H. Feldermann, M. Sebastian, J. Zweck, R. Fischer and H. Hofsäss, Mat. Res. Soc.
    Symp. Proc. 449 (1997) 331-336
  16. Electrical Properties and Thermal Stability of Ion Beam Deposited BN Films
    C. Ronning, M. Gross, E. Dreher, H. Feldermann and H. Hofsäss,
    Diam.
    Relat. Mater. 6 (1997) 1129-1134
  17. Electronic Structure of Undoped and Doped ta-C Films
    C. Ronning, E. Dreher, J.-U. Thiele, P. Oelhafen and H. Hofsäss,
    Diam.
    Relat. Mater. 6 (1997) 830-834
  18. Electrical Characterization of pn and pin Diode Structures Made by Ion Beam Deposition of Doped Diamond-like Carbon
    H. C. Hofsäss, C. Ronning, U. Griesmeier, M. Gross, A. Cedvall , E. Dreher and J. Biegel, in Applications of Diamond Films and Related Materials: Third International Conference, eds.: A. Feldman, Y. Tzeng, W.A. Yarbrough, M. Yoshikawa, M. Murakawa, NIST Special Publication 885 (1995) p.775-778
  19. Cubic Boron Nitride Films Grown by Low Energy B+ and N+ Ion Beam Deposition
    H. Hofsäss, C. Ronning, U. Griesmeier, M. Gross, S. Reinke, M. Kuhr,
    Appl.
    Phys. Lett. 67 (1995) 46-48
  20. Characterization of Cubic Boron Nitride Films Grown by Mass Separated Ion Beam Deposition
    H. Hofsäss, C. Ronning, U. Griesmeier, M. Gross, S. Reinke, M. Kuhr, J. Zweck, R. Fischer, Nucl.
    Instr. Meth. B 106 (1995) 153
  21. Conduction Processes in Boron and Nitrogen Doped Diamond-like Carbon Films Prepared by Mass Separated Ion Beam Deposition
    C. Ronning, U. Griesmeier, M. Gross, H. Hofsäss, R.G. Downing and G.P. Lamaze,
    Diam. Relat. Mater. 4 (1995) 666
  22. CxN1-x Thin Films Prepared by Mass Separated Ion Beam Deposition
    C. Ronning, U. Griesmeier, M. Gross, H. Hofsäss, in Beam-Solid Interactions for Materials Synthesis and Characterization, eds. D.E. Luzzi, T.F. Heinz, M. Iwaki, D.C. Jacobsen,
    Mat. Res. Soc. Symp. Proc. Vol 354 (1995) 93
  23. Characterization of Doped Diamondlike Carbon Films and Multilayers
    H. Hofsäss, J. Biegel, C. Ronning, R.G. Downing, G.P. Lamaze, in  Materials Synthesis and Processing Using Ion Beams , eds. R.J. Culbertson, K.S. Jones, O.W. Holland, K. Maex, Mat. Res. Soc. Symp. Proc. 316 (1994) 881
  24. Doping and Growth of Diamond-like Carbon Films by Ion Beam Deposition
    H. Hofsäss, H. Binder, T. Klumpp and E. Recknagel, Diam. Relat. Mater. 3 (1994) 137
  25.  Ion Implantation and Annealing of Diamond Studied by Emission Channeling and Cathodoluminescence
    C. Ronning and H. Hofsäss, Diam. Relat. Mater.
    8 (1999) 1623-1630
  26. Emission Channeling
    H. Hofsäss, Hyp. Int. 97/98 (1996) 247-283
  27. Impurity Lattice Location and Recovery of Structural Defects in Semiconductors Studied by Emission Channeling
    H. Hofsäss, U. Wahl and S. G. Jahn,  Hyp. Int. 84 (1994) 27-41
  28. Emission Channeling Studies in Semiconductors
    H. Hofsäss, S. Winter, S. Jahn, U. Wahl, E. Recknagel,
    Nucl. Instr. Meth. B63 (1992) 83-90
  29. Emission Channeling
    S. Winter, H. Hofsäss, S.G. Jahn, G. Lindner, U. Wahl and E. Recknagel,
    in Hyperfine Interaction of Defects in Semiconductors, ed.: G. Langouche
    (Elsevier, Amsterdam, 1992) 157-185
  30. Emission Channeling and Blocking
    H. C. Hofsäss and G. Lindner, Physics Reports 201 (1991) 121-183
  31. Lattice site and diffusion of ion-implanted Li in as-grown and Se-rich ZnSe
    K. Bharuth-Ram, M. Restle, H. Hofsäss, C. Ronning, U. Wahl, and ISOLDE Collaboration Physica  B 273 (1999) 875
  32. Emission Channeling Studies of Defect Annealing in the Wide Band Gap Semiconductors ZnTe and ZnSe
    K. Bharuth-Ram, H. Hofsäss, M. Restle, U. Wahl and the ISOLDE Collaboration, Nucl. Instr. Meth. B 156 (1999) 244
  33. Li-Defect Reactions During Low Dose Ion Implantation of 8Li into ZnSe Single Crystals
    M. Restle , M. Dalmer, U. Wahl, H. Hofsäss and ISOLDE Collaboration, MRS Symp. Proc. 540 (1999)
  34. Combination of Emission Channeling, Photoluminescence and Mössbauer Spectroscopy to Identify Rare Earth Defect Complexes in Semiconductors
    M. Dalmer , U. Vettera, M. Restle , A. Stötzler, H. Hofsäss , C. Ronning, V.V. Naicker, M.K. Moodley, K. Bharuth-Ram and the ISOLDE-Collaboration, Proc. 11th Int. Conf. on Hyperfine Interactions, Hyp. Int. 120/121 (1999) 347
  35. Lattice Location and Luminescence Behavior of Rare Earth Elements Implanted in GaN
    M. Dalmer, M. Restle, A. Stötzler, U. Vetter, H. Hofsäss, M.D. Bremser, C. Ronning, R.F. Davis and ISOLDE Collaboration, in "Nitride Semiconductors", S. DenBaars, B. Meyer, S. Nakamura, F. Ponce (eds.), MRS Proc. Vol. 482 (1998) 1021-1026
  36. Li Ion Implantation Studies in GaN
    M. Dalmer, M. Restle, C. Ronning, M. Sebastian, U. Vetter, H. Hofsäss, M.D. Bremser, R.F. Davis, U. Wahl, K. Bharuth-Ram, and ISOLDE Collaboration, J. Appl. Phys. 84 (1998) 3085
  37. Annealing Behaviour of ZnTe Investigated with 111mCd-Emission Channeling
    K. Bharuth-Ram, M. Restle and H. Hofsäss, Nucl. Instr. Meth B 136 (1998) 751
  38. Recovery of Structural Defects in GaN after Heavy Ion Implantation
    C. Ronning, M. Dalmer, M. Deicher, M. Restle, M.D. Bremser, R.F. Davis and H. Hofsäss, MRS Symp. Proc. Vol. 468 (1997) 407-412
  39. Perturbed Angular Correlation Measurements and Lattice Site Location of Br in GaAs
    M. Wehner, M. Risse, R. Vianden, M. Dalmer, H. Hofsäss, M.C. Ridgeway, M. Petravic and ISOLDE Collaboration, Mater. Sci. For. 258-263 (1997) 899
  40. Substitutional Phosphorous Doping of Diamond by Ion Implantation
    H. Hofsäss, M. Dalmer, M. Restle and C. Ronning, J. Appl. Phys. 81 (1997) 2566
  41. Behavior of the Potential n-Type Dopants P and As in Diamond After Low Dose Ion Implantation
    H. Hofsäss, M. Dalmer, M. Restle, C. Ronning, K. Bharuth-Ram, H. Quintel and The ISOLDE-Collaboration, Mat. Res. Soc. Symp. Proc. Vol. 442 (1997) 675-680
  42. Microscopic Studies of Implanted 73As in Diamond: g-e- PAC and Emission Channeling Measurements
    J.G. Marques, E. Alves, D. Forkel-Wirth, S.G. Jahn, M. Restle, M. Dalmer, H. Hofsäss, K. Bharuth-Ram and ISOLDE Collaboration, Nucl. Instr. Meth. B 127/128 (1997) 723
  43. Cathodoluminescence Studies of Ion Implanted Diamond
    H. Sternschulte, T. Albrecht, K. Thonke, R. Sauer, M. Dalmer, C. Ronning and
    H. Hofsäss, Appl.
    Phys. Lett. 71 (1997) 2668
  44. Ion implantation Doping of Diamond Studied by PAC
    K. Bharuth-Ram, A. Burchard, M. Deicher, K. Freitag, H. Hofsäss, S.G. Jahn, R. Magerle, H. Quintel, M. Restle, C. Ronning and the ISOLDE Collaboration,
    Hyperfine Interactions (C) 1 (1996) 212
  45. Thermal Stability of Substitutional Ag in CdTe and ZnSe
    S.G. Jahn, H. Hofsäss, M. Restle, C. Ronning, H. Quintel, K. Bharuth-Ram and U. Wahl, and the ISOLDE Collaboration, J. Cryst. Growth 161 (1996) 172
  46. Lattice Sites of Li in CdTe
    M. Restle, K. Bharuth-Ram, H. Quintel, C. Ronning, H. Hofsäss, S.G. Jahn and U. Wahl, and the ISOLDE Collaboration, J. Cryst. Growth 161 (1996) 168-171
  47. Alpha Emission Channeling Invesigations for Lattice Location of Li in Ge
    U. Wahl, S.G. Jahn, M. Restle, H. Quintel, H. Hofsäss,
    Nucl.
    Instr. Meth B 118 (1996) 76-81
  48. Emission Channeling Study of Annealing of Radiation Damage in Heavy-ion Implanted Diamond
    H. Quintel, K. Bharuth-Ram, H. Hofsäss, M. Restle, C. Ronning,
    Nucl. Instr. Meth. B 118 (1996) 72-75
  49. Amorphization of ZnSe by Ion Implantation at Low Temperatures
    S.G. Jahn, H. Hofsäss, M. Restle, C. Ronning, H. Quintel, K. Bharuth-Ram, and the ISOLDE-Collaboration, in Ion Beam Modification of Materials, eds. J.S. Williams, R.G. Elliman, M.C. Ridgway, (Elsevier, Amsterdam, 1996) p. 907-911
  50. Lattice Sites of Ion Implanted Li in Zn-rich ZnSe
    S. G. Jahn, U. Wahl, M. Restle, H. Quintel, H. Hofsäss and M. Wienecke,
    Mat. Sci. For. 196-201, Part 1 (1995) 315-320
  51. Lattice Sites of Li in Si and Ge
    U. Wahl, S.G. Jahn, M. Restle, H. Quintel and H. Hofsäss,
    Mat. Sci. For. 196-201, Part 1 (1995) 115-120
  52. Lattice Sites of Ion Implanted Li in Diamond
    M. Restle, K. Bharuth-Ram, H. Quintel, C. Ronning, U. Wahl, S.G. Jahn and H. Hofsäss
    Appl. Phys. Lett. 66 (1995) 2733
  53. Lattice Sites of Arsenic Ions Implanted in Diamond
    K. Bharuth-Ram, H. Quintel, M. Restle, C. Ronning, S.G. Jahn and H. Hofsäss, J. Appl. Phys. 78 (1995) 5180-5182
  54. a-Emission Channeling Studies of the Lattice Site of Oversized Atoms Implanted in Fe and Ni Single Crystals
    J. De Wachter, S. Blässer, H. Hofsäss, S. Jahn, M. Lindroos, R. Moons, H. Pattyn, M. Restle, A. Vantomme, U. Wahl, P. van Duppen, G. Langouche, Nucl. Instr. Meth. B 106 (1995) 23-27
  55. Li on Bond-Center Sites in Si
    U. Wahl, M. Restle, C. Ronning, H. Hofsäss, S.G. Jahn,  Phys.
    Rev. B50 (1994) 2176
  56. Lattice Sites of Ion Implanted Li in Indium-Antimonide
    H. Hofsäss, U. Wahl, M. Restle, C. Ronning and E. Recknagel, Nucl. Instr. Meth. B85 (1994) 468
  57. Lattice Location of Implants in Diamond by Conversion Electron Emission Channeling
    E.J. Storbeck, S.H. Connell, J.P.F. Sellschop and H. Hofsäss,
    Nucl. Instr. Meth. B 85 (1994) 503
  58. Direct Evidence for Substitutional Li after Ion Implantation into Highly Phosphorous-doped Si
    U. Wahl, H.Hofsäss, S.G. Jahn, S. Winter and E. Recknagel, Appl.
    Phys. Lett. 62 (1993) 684
  59. Lattice Location and Annealing Studies of Heavy Ion Implanted Diamond
    H. Hofsäss, M. Restle, U. Wahl and E. Recknagel,  Nucl.
    Instr. Meth. B80/81 (1993) 176
  60. Microscopic Characterization of Heavy-ion Implanted Diamond
    A. Burchard, M. Restle, M. Deicher, H. Hofsäss, S.G. Jahn, Th. König, R. Magerle, W. Pfeiffer and U. Wahl,   Physica B 185 (1993) 150
  61. Lattice Site Changes of Ion Implanted 8Li in Si Studied by Alpha Emission Channeling
    U. Wahl, H. Hofsäss, S.G. Jahn, S. Winter, H. Hoffmann, E. Recknagel,
    Nucl.
    Instr. Meth. B63 (1992) 91
  62. Lattice Location of Ion Implanted 8Li in InP Studied by Alpha Emission Channeling
    U. Wahl, H. Hofsäss, S. Jahn, S. Winter, E. Recknagel, Nucl.
    Instr. Meth. B64 (1992) 221
  63. Structural Defect Recovery in GaP after Heavy Ion Implantation
    S.G. Jahn, H. Hofsäss, U. Wahl, S. Winter, E. Recknagel, Appl.
    Surf. Sci. 50 (1991) 169
  64. Perturbed-Angular-Correlation Measurements of Trivalent Indium Defects in Silver Chloride
    J.C. Austin, M.L. Swanson, W.C. Hughes, C.T. Kao, L.M. Slifkin, H.C. Hofsäss, E.C. Frey, Phys. Rev. B42 No. 13 (1990) 7699
  65. Lattice Site Prevalence of Ion Implanted Li in GaAs
    S. Winter, S. Blässer, H. Hofsäss, S. Jahn, G. Lindner, U. Wahl and E. Recknagel, in Defect Control in Semiconductors, ed: K. Sumino (Elsevier, 1990) p. 903
  66. Lattice Location of Ion Implanted Radioactive Dopants in Compound Semiconductors
    S. Winter, S. Blässer, H. Hofsäss, S. Jahn, G. Lindner, U. Wahl, E. Recknagel, Nucl.
    Instr. Meth. B48 (1990) 211
  67. Annealing Behaviour of Compound Semiconductors After Ion Implantation Investigated by Emission-Channeling and Blocking
    S.G. Jahn, H. Hofsäss, U. Wahl, S. Winter, E. Recknagel, Proceedings of XXV Zakopane School on Physics (Zakopane, Poland), Vol. 1: Condensed Matter Studies by Nuclear Methods, eds: J. Stanek, A.T. Pedziwiatr (World Scientific, Singapore, 1990)  p. 331
  68. Lattice Location of Ion Implanted Dopants in GaAs Using Radioactive Probes
    S. Winter, S. Blässer, H. Hofsäss, S. Jahn, G. Lindner and E. Recknagel,
    Mat. Sci. For. 38-41 (1989) 1221
  69. Site Changes of Ion-Implanted Li in GaAs below 300 K
    G. Lindner, S. Winter, H. Hofsäss, S. Jahn, S. Blässer, E. Recknagel and G. Weyer,
    Phys.
    Rev. Lett. 63 No.2 (1989) 179
  70. Localization of Impurity Atoms by Channeling of Electrons and Positrons
    H. Hofsäss, G. Lindner, S. Winter and E. Recknagel, in Nuclear Physics Applications on Materials Science, eds. E. Recknagel and J.C. Soares, NATO ASI Series E: Applied Sciences Vol. 144 (Kluwer Academic Publishers, Dordrecht, 1988) p. 157
  71. Lattice Location of Nuclear Probes by Electron and Positron Channeling
    H. Hofsäss, B. Besold, G. Lindner, S. Winter, E. Recknagel and G. Weyer, in Relativistic Channeling , eds. R.A. Carrigan and J.A. Ellison, NATO ASI Series B: Physics Vol. 165 (Plenum Press, New York  London, 1987)  p. 483
  72. Combined PAC and Electron-Channeling Studies of He-Defect-Interaction in Cu Between 300 and 900 K
    H. Hofsäss, S. Winter. G. Lindner, M. Deicher, G. Grübel, Th.
    Wichert and E. Recknagel, Radiation Effects 103 (1987) 1-14
  73. Electron-Positron-Channeling and Mössbauer-Effect Studies of Indium-Vacancy Complexes in Ion-Implanted Nickel
    B. Besold, E. Danielsen, H. Hofsäss, G. Lindner, J.W. Petersen, E. Recknagel, M. Sondergaard, G. Weyer, S. Winter,  eds.: H. Wollenberger and C. Abromeit,
    Mat. Sci. For. 15 - 18 (1987) 665
  74. Direct Evidence for Substitutional Ion-Implanted Indium Dopants in Silicon
    G. Lindner, H. Hofsäss, S. Winter, B. Besold, G. Weyer, E. Recknagel, and J.W. Petersen, Phys.
    Rev. Lett. 57 No.18 (1986) 2283
  75. Localization of Implanted Radioactive Probes by Channeling of ß-, ß+ and Conversion Electrons
    H. Hofsäss, G. Lindner, S. Winter, B. Besold, E. Recknagel and G. Weyer, Nucl. Instr. Meth. B13 (1986) 71-75
  76. As-Implanted Lattice Sites of Dopants in Semiconductors
    H. Hofsäss, G. Lindner, S. Winter, B. Besold, E. Recknagel, G. Weyer and J.W. Petersen,  ed.: H.J. von Bardeleben , Mat. Sci. For. 10-12 (1986) 1183
  77. Perturbed Angular Correlation and Rutherford Backscattering Studies in Indium Implanted Silicon
    M. Deicher, G. Grübel, H. Hofsäss, E. Recknagel and Th. Wichert, Nucl.
    Instr. Meth. B15 (1986) 418-421
  78. Channeling of Conversion Electrons from Radioactive Impurities for Analysis of Atomic Structures in Solids
    H. Hofsäss, G. Lindner, E. Recknagel and Th.
    Wichert, Nucl. Instr. Meth. B2 (1984) 13-18
  79. Microstructure Analysis by Channeling Using Nuclear Probes
    G. Lindner, H. Hofsäss, E. Recknagel and Th. Wichert, in Microstructural Characterization of Materials by Non-Microscopical Techniques, eds.
    N. Hessel Andersen et. al. (Riso National Laboratory Roskilde, Denmark, 1984) p. 377
  80. Detection of Vacancy Clustering by Combined PAC and Lattice Location Experiments
    M. Deicher, H. Hofsäss, G. Lindner, E. Recknagel, Th.
    Wichert, M. L. Swanson, L. M. Howe and A. F. Quenneville, Hyp. Int. 15/16 (1983) 379
  81. Probing of Lattice Defects by Radioactive Atoms
    Th. Wichert, M. Deicher, G. Lindner, H. Hofsäss and E. Recknagel, Nucl. Instr. Meth. 218 (1983) 633
  82. Conventional Recoil Spectrometry
    J. Tirira, Y. Serruys, P. Trocellier and H. Hofsäss, in Forward Recoil Spectrometry: Applications to Hydrogen Determination in Solids, Chapter 5, J. Tirira, Y. Serruys and P. Trocellier (eds.), (Plenum Press, New York, 1996, ISBN 0-306-45249-9) p. 127-142
  83. Coincidence Techniques
    H. Hofsäss, J. Tirira, Y. Serruys and P. Trocellier, in Forward Recoil Spectrometry: Applications to Hydrogen Determination in Solids, Chapter 9, J. Tirira, Y. Serruys and P. Trocellier (eds.), (Plenum Press, New York, 1996, ISBN 0-306-45249-9) p.209-246
  84. Elastic Recoil Coincidence Spectroscopy (ERCS)
    H.C. Hofsäss, N.R. Parikh, M.L. Swanson and W.K. Chu, Nucl.
    Instr. Meth. B58 (1991) 49
  85.  Erratum to "Modeling detector response for neutron depth profiling" [NIM A 366 (1995) 137]
    K.J. Coakley, R.G. Downing, G. Lamaze, H.C. Hofsäss, C. Ronning, J. Biegel, Nucl. Instr. Meth A 515, (2003) 892
  86. High-Resolution elastic recoil detection utilizing Bayesian probability theory
    P. Neumaier, G. Dollinger, A. Bergmeier, I. Genchev, L. Görgens, R. Fischer, V. Dose, C. Ronning, H. Hofsäss, Nucl. Instr. Meth. B 183 (2001) 48-61
  87. High Sensitivity Depth Profiling of Light Elements Using Elastic Recoil Coincidence Spectroscopy (ERCS)
    H. C. Hofsäss, N.R. Parikh, M.L. Swanson and W. K. Chu, Proc. of XXV Zakopane School on Physics (Zakopane, Poland), Vol. 1: Condensed Matter Studies by Nuclear Methods, eds: J. Stanek, A.T. Pedziwiatr (World Scientific, Singapore, 1990)  p. 161
  88. Depth Profiling of Light Elements using Elastic Recoil Coincidence Spectroscopy (ERCS)
    H. C. Hofsäss, N. R. Parikh, M. L. Swanson, W. K. Chu, Nucl. Instr. Meth. B45 (1990) 151
  89. Neutron Depth Profiling by Coincidence Spectrometry
    N. R. Parikh, E. C. Frey, H. C. Hofsäss, M. L. Swanson, R.G. Downing, T. Z. Hossain, W. K. Chu, Nucl. Instr. Meth. B45 (1990) 70
  90. Modeling Detector Response for Neutron Depth Profiling
    K.J. Coakley, R.G. Downing, G. Lamaze, H. Hofsäss, C. Ronning and J. Biegel,
    Nucl. Instr. Meth. A 366 (1995) 137-144
  91. Range Parameter Study of Au and Bi Implanted into Carbon Nitride Films
    J. R. Kaschny, R. Pérez, M. Behar, H. Hofsäss and D. Fink, Nucl. Instr. Meth.
    B 122 (1997) 8-12
  92. The Accident at Chernobyl: A Report on Risk Management at a Local Hot Spot in West Germany
    M. Deicher, A. Ernst, H. Hofsäss, G. Lindner, E. Recknagel and C. Hohenemser, in New Risks Issues and Management, eds. L.A. Cox, Jr. and P. F. Ricci (Plenum Press, New York, 1990) p. 477 (Proceedings of the 1986 Annual Meeting of the Society for Risk Analysis, Boston, USA 1986)
  93. Radioaktive Kontamination in der Bodensee-Region als Folge des Tschernobyl-Reaktorunfalls
    G. Lindner, M. Deicher, H. Hofsäss, S.G. Jahn, D. Petermann, W. Pfeiffer, U. Wahl and E. Recknagel, in Tagungsbericht Jahrestagung Kerntechnik 1987, ed.: Deutsches Atomforum (Bonn, 1987) p. 283
  94. Chernobyl: An early Report
    C. Hohenemser, M. Deicher, A. Ernst, H. Hofsäss, G. Lindner and E. Recknagel,
    Environment 28 (1986) 6  ;  short reprint in Chemtech 16 (1986) 596
  95. Agricultural Impact of Chernobyl: A Warning
    C. Hohenemser, M. Deicher, H. Hofsäss, G. Lindner, E. Recknagel and J.I. Budnik,
    Nature 321 (1986) 817
  96. Überregionale Aspekte der Tschernobyl-Radioaktivität im Bodensee-Gebiet
    G. Lindner, M. Deicher, R. Eckmann, H. Hofsäss, S.G. Jahn, W. Müller, D. Petermann, W. Pfeiffer, S. Teufel, U. Wahl, S. Winter and E. Recknagel, in Radioaktivitäts­messungen in der Schweiz nach Tschernobyl und ihre wissenschaftliche Interpretation, eds.: L. André, E.J. Born and G. Fischer (Bern, 1986)  p. 312


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