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Methods

On the following pages you will find an overview of the experimental setups run by our group. They are partially installed at our accelerators. For further information about the setups and possible collaborations please contact the person responsible.


Ultra-Low-Energy (20 eV) Ion Implantation Doping of Graphene

 

We can implant graphene sheets on various substrates as well as graphene on TEM grids with mass selected ultra low energy mass selected ions under UHV conditions (P < 10-6 Pa)

Ion energy:down to 20 eV rather uniform over an area of about 2 cm2

Beam current: several µA

Typical Ion Fluences: 1E14 - 1E15 /cm2

Efficiency : about 1% of the ions are incorporated and, for B and N,  occupy substitutional sites, i.e. replace C-atoms

Available ions: H, B, C, N, O, F, P, S, Se, metal ions up to W, noble gases, Ga, rare earth ions

 

Proton Beam Writing of 3D microstructures in Semiconductors

 

Ion irradiation of surfaces ans ion induced pattern formation

 

- Pattern formation by sputter erosion of surfaces

- surfactant sputtering

- evolution of surface ripples on Si and C

- surface ripples on ferromagnetic (Fe, Ni) metal films

 

 

Ion beam deposition of thin films

- boron nitride (c-BN, h-BN, t-BN)

- tetrahedral amorphous carbon (ta-C)

- carbon nitride, boron carbide, fluorinated a-C

- metal carbon composite thin films

- mass selected ion beam depsoition

- analysis of ion solid interaction using isotopically pure markers

 

Ion beam synthesis and analysis

 

Characterization of thin films

 

Semiconductor spectroscopy

 

Nuclear solid state physics

Contact Us

II. Physikalisches Institut
Friedrich-Hund-Platz 1
37077 Göttingen
Germany
(driving instructions)

Tel.: +49 (0)551 39-7630
Fax.: +49 (0)551 39-4493

email us

 


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