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  • Demonstration of Temperature Dependent Energy Migration in Dual-Mode YVO4:Ho3+/Yb3+ Nanocrystals for Low Temperature Thermometry
    Manoj Mahata, Tristan Koppe, Kaushal Kumar, Hans Hofsäss, and Ulrich Vetter
    Scientific Reports 6 (2016) art. no. 36342
  • "Photon-Upconverting Materials: Advances and Prospects for Various Emerging Applications
    Manoj K. Mahata, Hans Hofsäss, and Ulrich Vetter
    "Luminescence - An Outlook on the Phenomena and their Applications", book edited by Jagannathan Thirumalai, ISBN 978-953-51-2763-5
  • Overview of band-edge and defect related luminescence in aluminum nitride
    Tristan Koppe, Hans Hofsäss, and Ulrich Vetter
    Journal of Luminescence 178 (2016) 267–281
  • Photoluminescence of gallium ion irradiated hexagonal and cubic GaN quantum dots
    Charlotte Rothfuchs, Nadezhda Kukharchyk, Tristan Koppe, Fabrice Semond, Sarah Blumenthal, Hans-Werner Becker, Donat J. As, Hans C. Hofsass, Andreas D. Wieck, Arne Ludwig - accepted for publication in Nucl. Instr. Meth. B
  • Temporal evolution of Ge surface topography under keV ion irradiation: Synergetic roles of curvature-dependent sputter erosion and atomic redistribution
    D. P. Datta, S. K. Garg, T. Basu, B. Satpati, H. Hofsäss, D. Kanjilal, and T. Som
    Appl. Surf. Sci 360 A (2016) 131-142
  • Argon ion beam induced surface pattern formation on Si
    H. Hofsäss, O Bobes, K Zhang, J. Appl. Phys. (2016) accepted



    • Host Sensitized Luminescence and Time-Resolved Spectroscopy of YVO4: Ho3+ Nanocrystals
      Manoj Kumar Mahata, Tristan Koppe, Hans Hofsäss, Kaushal Kumar, Ulrich Vetter
      Physics Procedia 76 (2015) 125-131
    • Electrical conduction of ion tracks in tetrahedral amorphous carbon: Temperature, field and doping dependence and comparison with matrix data
      J Krauser, H-G Gehrke, H Hofsäss,  J Amani, C Trautmann, and A Weidinger
      New J. Phys. 17 (2015) 123009
    • Analysis of immittance spectra: Finding unambiguous electrical equivalent circuits to represent the underlying physics
      Julian Alexander Amani, Tristan Koppe, Hans Hofsäss, and Ulrich Vetter
      Physical Review Applied 4 (2015) 044007
    • Electronic Structure Modification of Ion Implanted Graphene: The Spectroscopic Signatures of p- and n-Type Doping
      JD.M. Kepaptsoglou, T.P. Hardcastle, C.R. Seabourne, U. Bangert, R. Zan, J. Amani, H. Hofsäss, R.J. Nicholls, R. Brydson, A.J. Scott and Q.M. Ramasse
      ACS Nano (2015) published online
    • Mössbauer Spectroscopy study of Surfactant Sputtering induced Fe Silicide formation on a Si surface
      C. Beckmann, K. Zhang, H. Hofsäss, C. Brüsewitz, U. Vetter, and K. Bharuth-Ram
      Applied Surface Science 357 (2015) 493-497
    • Incorporation of Zn2+ ions into BaTiO3:Er3+/Yb3+ nanophosphor: an effective way to enhance upconversion, defect luminescence and temperature sensing
      M.K. Mahata, T. Koppe, T. Modal, C. Brüsewitz, K Kumar, R.V. Kumar, H. Hofsäss, and U. Vetter
      Physical Chemistry Chemical Physics 17 (2015) 20741-20753
    • Doping of Graphene by Low-Energy Ion Beam Implantation: Structural, Electronic and Transport Properties
      Philip Willke, Julian A. Amani, Anna Sinterhauf, Sangeeta Thakur , Thomas Kotzott, Steffen Weikert, Kalobaran Maiti, Hans Hofsäss, Martin Wenderoth
      Nano Letters (2015) accepted for publication
    • Model for roughening and ripple instability due to ion-induced mass redistribution [Addendum to H. Hofsäss, Appl. Phys. A 114 (2014) 401, “Surface instability and pattern formation by ion-induced erosion and mass redistribution”]
      Hans Hofsäss
      Appl. Phys. A 119 (2015) 687



    • Silicide phases formation in Co/c-Si and Co/a-Si systems during thermal annealing
      M. Novakovic, M. Popovic, K. Zhang, KP. Lieb, N. Bibic
      Applied Surface Science 295 (2014) 158-163



    • Ion implantation of graphene - towards IC compatible technologies
      U. Bangert, W. Pierce, D.M.D. Kepaptsoglou, Q.M. Ramasse, R. Zan, M. Gass, J.A. Van Den Berg, C. Boothroyd, J. Amani, H. Hofsaess
      Nano Letters 13 (2013) 4902-4907
    • Propagation of ripple patterns on Si during ion bombardment
      H. Hofsass, K. Zhang , H. G. Gehrke, Ch. Brusewitz
      Physical Review B 88 (2013) 075426
    • Investigation of the effect of low energy ion beam irradiation on mono-layer graphene
      YJ. Xu, K. Zhang, Ch. Brusewitz, XM. Wu, H. Hofsäss,
      AIP Advances 3 (2013) 072120
    • Single crystal pillar microcompression tests of the MAX phases Ti2InC and Ti4AlN3
      Ch. Brüsewitz, I. Knorr, H.C. Hofsäss, M.W. Barsoum, C.A. Volkert
      accepted for publication in Scripta Materialia (2013)
    • Conductive tracks of 30-MeV C60 clusters in doped and ndoped tetrahedral amorphous carbon
      J. Krauser, H.-G. Gehrke, H. Hofsäss, Ch. Trautmann, A. Weidinger
      NIM B (2013), in press
    • Enhanced resputtering and asymmetric interface mixing in W/Si multilayers
      C. Eberl, T. Liese, F. Schlenkrich, F. Döring, H. Hofsäss, H.-U.Krebs
      Applied Physics A 111 (2013) 431-437
    • Modifications of reactively sputtered titanium nitride films by argon and vanadium ion implantation: Microstructural and opto-electric properties
      M. Popvic, M. Novakovic, A. Travers, K. Zhang, N. Bibic, H. Hofsäss, and K.P. Lieb
      Thin Solid Films 531 (2013) 189-196



    • Analysis of the spectra of trivalent erbium in multiple sites of hexagonal aluminum nitride
      J. B. Gruber, U. Vetter, G. W. Burdick, Z. D. Fleischman, L. D. Merkle, T. Taniguchi, Y. Xiaoli, T. Sekiguchi, D. Jürgens, and H. Hofsäss
      Optical Materials Express 2 (2012) 1186-1202
    • The role of phase separation for self-organized surface pattern formation by ion beam erosion and metal atom co-deposition
      H. Hofsäss, K. Zhang, A. Pape, O. Bobes, M. Brötzmann
      Applied Physics A 111 (2012) 653-664
    • Ion beam induced surface patterns due to mass redistribution and curvature dependent sputtering
      O. Bobes, K. Zhang and H. Hofsäss
    • Nano-hillock formation in diamond-like carbon induced by swift heavy projectiles in the electronic stopping regime: experiments and atomistic simulations
      D. Schwen,E. Bringa, J. Krauser, A. Weidinger, C. Trautmann,and H. Hofsäss
      Appl. Phys. Lett. 101, 113115 (2012)
    • Sharp transition from ripple patterns to a flat surface for ion beam erosion of Si with simultaneous co-deposition of iron
      K. Zhang, M. Brötzmann, H. Hofsäss
      AIP Advances 2, 032123 (2012)
    • Conductivity enhancement of ion tracks in tetrahedral amorphous carbon by doping
      J. Krauser, A.-K. Nix, H.-G. Gehrke, H. Hofsäss, Ch. Trautmann, A. Weidinger
      Nucl. Instr. Meth B 272 (2012) 280
    • Ion beam induced surface patterns due to mass redistribution and curvature-dependent sputtering
      O. Bobes, K. Zhang, H. Hofsäss
      Physical Review B 86 (2012) 235414
    • Microstructural and opto-electrical properties of chromium nitride films implanted with vanadium ions
      M. Novakoviæ, A. Traverse, M. Popoviæ, K. P. Lieb, K. Zhang & N. Bibić
      Radiation Effects and Defects in Solids: Incorporating Plasma Science and Plasma Technology 167 (2012) 496-505







    • Fundamentals of surfactant sputtering
      H. Hofsäss, K. Zhang
      Nucl. Instr. Meth. Phys. Res. B 267 (2009) 2731
    • Morphology of Si surfaces sputter-eroded by low-energy Xe-ions at glancing incident angle
      K. Zhang, H. Hofsäss, F. Rotter, M. Uhrmacher, C. Ronning, J. Krauser
      Surf. Coat. Technol. 203 (2009) 2359
    • Structure and Defects in epitaxial Si(111) layers on Y2O3(111) / Si(111) Support Systems
      C. Borschel, C. Ronning, H. Hofsäss, A. Guissani, P.  Zaumseil, C. Wenger, P. Storck, T. Schröder
      J. Vac. Sci. Technol. B 27 (2009) 305
    • Self-organized formation of carbon/copper layered thin films
      H. Zutz, D. Lyzwa, C. Ronning, M. Seibt, H. Hofsäss
      Nucl. Instr. Meth. Phys. Res. B 267 (2009) 1356
    • Nanostructured carbide surfaces prepared by surfactant sputtering
      H. Hofsäss, K. Zhang, H. Zutz
      Nucl. Instr. Meth. B 267 (2009) 1398
    • Precision Measurements of the 278 keV 14N(p,γ) and the 151 keV 18O(p,α) Resonance
      M. Borowski, K.P. Lieb, M. Uhrmacher, W. Bolse
      AIP Conf. Proc. 1090 (2009) 450
    • Simulation and fitting of high resolution Rutherford backscattering spectra
      C. Borschel, M. Schnell, C. Ronning, H. Hofsäss
      Nucl. Instr. Meth. Phys. Res. B 267 (2009) 1737
    • p-type conduction in beryllium-implanted hexagonal boron nitride films
      B. He,
      W. J. Zhang, Z. Q. Yao, Y. M. Chong, Y. Yang, Q. Ye, X. J. Pan, J. A. Zapien, I. Bello, S. T. Lee, I. Gerhards, H. Zutz, and H. Hofsäss,
      Appl. Phys. Lett. 95 (2009) 252106

    • Ion Solid Interaction
      H. Hofsäss, in: Ion Beam, Photon and Hyperfine Methods in Nano-Structured Materials,
      Erasmus Intensive Programme 2009, (edition winterwork, Grimma, 2009) pp. 107-139 ISBN 978-3-940167-94-1


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